Semiconductor

/ 125 posts

The EDGE Semiconductor Research Zone provides in-depth analysis of the global chip industry's complex supply chain, from FinFET to silicon photonics. We cover AI, geopolitics, and rapid tech iteration with continuously updated insights, empowering you to master critical variables and make informed decisions.

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EDGE / / 11 minutes read

6-3-1 Metal Bodyguards for Chips: Kenmec (3653) and Flatness Anxiety in the CoWoS Era

In the CoWoS era, heat spreaders are critical for AI chip protection. Kenmec (3653) uses 'precision cold forging' to overcome warpage, achieving micron-level flatness for optimal heat dissipation and yield. Its one-stop plating/stiffener frame service grants strong pricing power, a semiconductor ...
EDGE / / 9 minutes read

6-3-0 The Origin of Heat: Chemical Warfare at the Microscopic Interface and Invisible Killers

This article analyzes semiconductor interface thermal challenges, revealing the 'pump-out effect' caused by thermal expansion coefficient differences. Emphasizing AI server long-term stability, it introduces Phase Change Materials (PCM) that, via solid-liquid conversion, fill air gaps and resist ...
EDGE / / 8 minutes read

6-2-4: The Gatekeeper of Safety Regulations – The EMI Nightmare at High Frequencies and the Front-Line Arsenal

The article examines AI server EMI challenges from high-frequency switching; common mode inductors & decoupling capacitors ensure voltage stability. Murata, with material science & nanoscale MLCCs, builds AI supply chain barriers, showing structural growth in high-end passive components from comp...
EDGE / / 11 minutes read

6-2-3 Explosion of Power Phases: The Inductor War of PMIC, M-CLL, and TLVR

AI chips' extreme V/kA challenge motherboard power, driving 'phase explosion'. PMICs' multi-phase/precision control solves high-load transient response. MPS leads single-chip integration; Renesas builds M&A solutions. Traditional inductors hit limits, making TLVR, M-CLL, vertical power key AI bat...
EDGE / / 11 minutes read

6-2-2: The Core Driver of 800V: The Physical Battleground of Silicon Carbide (SiC) and Gallium Nitride (GaN)

The 800V trend sets the third-gen semiconductor battleground: Silicon exits; SiC dominates high-voltage power, GaN handles high-frequency conversion. Despite SiC defects/yield causing giant financial crises, AI data centers' rigid high-voltage power demand is SiC's certain long-term growth driver.
EDGE / / 9 minutes read

6-2-1 The Faucet of Electric Current: The Switching Philosophy of MOSFET and IGBT

Analyzing the switching philosophy of power MOSFETs and IGBTs in AI servers. MOSFETs provide high-frequency power like microscopic faucets; Super Junction's 3D structure tackles silicon heating, securing the sub-48V market. IGBTs' high voltage resistance protects data center front ends, aiding ma...